Litho Process Karl Suss MA6 - Status: In Use
  • Current Status: In Use
  • Training: View Topics/Sessions
  • Use Rates:
    • External Academic & Government: $68.25/Hour
    • External Affiliated Commercial/Industrial: $68.25/Hour
    • External Commercial/Industrial: $91.00/Hour
    • External International Academic: $91.00/Hour
    • Internal Standard: $45.50/Hour
  • Service: Request Service Quote. The Staff rate is $50/hour (Internal) and $55 /hour (External) in addition to the instrument rate.
  • Building: NANO (0070)
  • Room: Cleanroom, Photolithography (165)
  • In Cleanroom: Yes
  • Main Contact: Bill Lewis
 Description: The Karl Suss MA-6 Contact Aligner system can perform precision mask-to-wafer (sample) 1:1 contact printing in four modes; hard contact, soft contact, vacuum and proximity. It can accommodate exposure of irregularly shaped substrates and standard wafers to 6”. Features: Contact 1:1 aligner. DUV and IR capability Approximate Exposure Intensity: 8 mW/cm2@365 nm, 5 mW/cm2@405 nm Constant exposure intensity controller Two mask holder sizes are available, 4" and 5". Wafer size is 4" and pieces. Maximum wafer thickness 4.3mm Split field microscope for top-side viewing/alignment. resolution = down to .8um in vacuum contact mode @ 400nm

The use of the developer station (not tracked/charged) is built into the charge rate.

Photolithography wiki link
Photoresist wiki link
Microfabrication wiki linkLatest Status Log EntryMar 28, 2024 - Resource Status Up - up -expose intensity increased. adjusted lamp Z. removed iline filter dose test for 1512. new dose for 1512 is 23mj per micron. more info to come.
Capabilities Training Prerequisites Calendar Contacts Docs

Description: The Karl Suss MA-6 Contact Aligner system can perform precision mask-to-wafer (sample) 1:1 contact printing in four modes; hard contact, soft contact, vacuum and proximity. It can accommodate exposure of irregularly shaped substrates and standard wafers to 6”. Features: Contact 1:1 aligner. DUV and IR capability Approximate Exposure Intensity: 8 mW/cm2@365 nm, 5 mW/cm2@405 nm Constant exposure intensity controller Two mask holder sizes are available, 4" and 5". Wafer size is 4" and pieces. Maximum wafer thickness 4.3mm Split field microscope for top-side viewing/alignment. resolution = down to .8um in vacuum contact mode @ 400nm

The use of the developer station (not tracked/charged) is built into the charge rate.

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