Raith 150, e-beam lithography - Status: Available

  • Current Status: Available
  • Training: View Topics/Sessions
  • Use Rates:
    • External Academic & Government: $45.00/Hour
    • External Affiliated Commercial/Industrial: $52.50/Hour
    • External Commercial/Industrial: $60.00/Hour
    • External International Academic: $60.00/Hour
    • Internal Standard: $30.00/Hour
  • Service: Request Service Quote. The Staff rate is $50/hour
  • Building: NANO (0070)
  • Room: Cleanroom, E Beam (161)
  • In Cleanroom: Yes
  • Main Contact: Andres Trucco
The RAITH150 is a multipurpose tool capable of direct e-beam exposure, wafer scale process development at suboptical resolution. The system includes integrated linewidth and metrology functions which give the user the ability to optimize process reproducibility. In addition the SEM side can be used to obtain large high magnification tiled images by taking advantage of the high resolution interferometer stage.

Electron Beam Lithography wiki link
Photoresist wiki link
E-beam resist wiki link
Microfabrication wiki link


This is a staff run only resource. Latest Status Log EntryJul 8, 2021 - User Note: Restarting filament after TS Elsa. All Ok. Laser currently off.

The RAITH150 is a multipurpose tool capable of direct e-beam exposure, wafer scale process development at suboptical resolution. The system includes integrated linewidth and metrology functions which give the user the ability to optimize process reproducibility.

Features:
-Field Emission tip with acceleration voltage 200 eV - 30 KeV
-Probe current range 4 pA - 10 nA
-Writing field size variable 10µm - 800 µm
-Working distance Variable 5 - 12 mm
-Automated load lock,height sensing
-Laser interferometer 2 nm resolution
-Sample holders available Wafer: 4"
-Fixed Beam Moving Stage (FBMS) write capabilities for stitchless writing
-Large area high magnification SEM imaging using interferometer stage
-Universal sample for small pieces and wafers
-Module with motorized rotation and tilt function for inspection

Beam size:
-3.0 nm at 1kV and 30 micron aperture
-1.5 nm at 20 kV and 30 micron aperture