RIE/ICP - Unaxis SLR - Status: Available

  • Current Status: Available
  • Training: View Topics/Sessions
  • Use Rates:
    • External Academic & Government: $74.25/Hour
    • External Affiliated Commercial/Industrial: $74.25/Hour
    • External Commercial/Industrial: $99.00/Hour
    • External International Academic: $99.00/Hour
    • Internal Standard: $49.50/Hour
  • Service: Request Service Quote. The Staff rate is $50/hour (Internal) and $55 /hour (External) in addition to the instrument rate.
  • Building: NANO (0070)
  • Room: Cleanroom, Dry Etch (162)
  • In Cleanroom: Yes
  • Main Contact: Bill Lewis
Description: Unaxis Shuttlelock Reactive Ion Etcher with Inductively Coupled Plasma Module. Etch Capabilities: SiO2, Si3N4, photoresist, polyimide, Al, dielectrics and other commonly used materials. Features: -Process Gases Available: SF6, CL2, CHF3, O2, Ar, H2, CH4, N2 -Wafer Clamping and He backside cooling- For 4” wafers only. Pieces smaller than 75mm may be processed without backside cooling. -Temperature controlled chamber -2KW ICP, 600W RIE -Automatic wafer load via load lock

Reactive-Ion Etching wiki link
Plasma Etching wiki link
Microfabrication wiki link
Latest Status Log EntryMar 11, 2024 - User Note: Not able to load clean recipe. Error when loading recipe from file. Unable to run clean process.

Description: Unaxis Shuttlelock Reactive Ion Etcher with Inductively Coupled Plasma Module. Etch Capabilities: SiO2, Si3N4, photoresist, polyimide, Al, dielectrics and other commonly used materials. Features: -Process Gases Available: SF6, CL2, CHF3, O2, Ar, H2, CH4, N2 -Wafer Clamping and He backside cooling. 4” and 5” wafer capable. 3” and 6” capable with purchase of additional wafer clamps. -Temperature controlled chamber -2KW ICP, 600W RIE -Automatic wafer load via load lock

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